| PART |
Description |
Maker |
| BTS432E2-E3062A BTS432E2E3043 SIEMENSAG-BTS432E2 |
TRANSISTOR SMD PROFET LESITUNGS MOSFET
44 A BUF OR INV BASED PRPHL DRVR, PSFM5
|
SIEMENS A G
|
| BTS730 Q67060-S7007-A2 Q67060-S7007A2 |
PWM Power Unit (The device allows continuous power control for lamps/LEDs or inductive loads.)
TRANSISTOR SMD PROFET LESITUNGS MOSFET
PWM Power Unit (The device allows continuous power control for lamps,LEDs or inductive loads.)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSP365CHIP BSP365E6327 |
Mini PROFET Smart High Side Switch
|
Infineon
|
| BTS432-F2 BTS432-F2E3043 BTS432-F2E3062A |
PROFET Smart High Side Power Switch
|
Infineon
|
| BTS50050-1EGA |
Smart High-Side Power Switch PROFET??/a>
|
Infineon Technologies AG
|
| BTS50080-1TEB |
Smart High-Side Power Switch PROFET One Channel
|
Infineon Technologies AG
|
| SP000094799 BTS5235G |
Smart High-Side Power Switch PROFET Two Channels, 60 m?
|
Infineon Technologies AG
|
| SP000092063 BTS6123P |
Smart High-Side Power Switch PROFET One Channel, 10 m?
|
Infineon Technologies AG
|
| CZT122 CZT127 |
SMD Bipolar Power Transistor PNP Darlington
SMD Bipolar Power Transistor NPN Darlington
SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR
|
Central Semiconductor Corp
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
| CZTA14 CZTA64 |
SMD Small Signal Transistor NPN Darlington
SMD Small Signal Transistor PNP Darlington
SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
